| 1 | Studies of device parameters of nanoscale double gate Si and Ge MOSFETs | |
| Researcher: | Bhattacherjee, Swagata | |
| Guide: | Biswas, Abhijit | |
| University: | University of Calcutta | |
| Language: | English | |
| Shodhganga | ||
| 2 | Studies of device parameters of nanoscale double gate Si and Ge MOSFETs | |
| Researcher: | Bhattacharjee, Swagata | |
| Guide: | Biswas, AbhijitBasu, P K | |
| University: | University of Calcutta | |
| Language: | English | |
| Shodhganga | ||
| 3 | Studies on nanoscale ge channel MOSFETs for analog and logic applications | |
| Researcher: | Mondal, Chandrima | |
| Guide: | Biswas, Abhijit | |
| University: | University of Calcutta, Kolkata | |
| Language: | English | |
| Shodhganga | ||
| 4 | Study of InGaAs N-channel MOSFETs for analog/mixed signal application | |
| Researcher: | Tewari, Suchismita | |
| Guide: | Biswas, AbhijitMallik, Abhijit | |
| University: | University of Calcutta, Kolkata | |
| Language: | English | |
| 5 | ||
| Researcher: | Das, Partha Sarathi | |
| Guide: | Biswas, Abhijit | |
| University: | University of Calcutta, Kolkata | |
| Language: | English | |
| Shodhganga | ||
| 6 | Study of InGaAs n channel mosfets for analog mixed signal application | |
| Researcher: | Tewari, Suchismita | |
| Guide: | Biswas, Abhijit | |
| University: | University of Calcutta | |
| Language: | English | |
| Shodhganga | ||