| Type of Material: | Thesis |
| Title: | Studies of device parameters of nanoscale double gate Si and Ge MOSFETs |
| Researcher: | Bhattacharjee, Swagata |
| Guide: | Biswas, Abhijit | Basu, P K |
| Department: | Department of Radio Physics & Electronics |
| Publisher: | University of Calcutta |
| Place: | Kolkata |
| Year: | 2012 |
| Language: | English |
| Subject: | Electronics engineering | Communication engineering | Radio physics | Electronics |
| Dissertation/Thesis Note: | PhD |
| Fulltext: | Shodhganga |
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| 001 | 251296 | |
| 003 | IN-AhILN | |
| 005 | 2012-10-30 06:30:19 | |
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| 035 | __ | |a(IN-AhILN)th_251296 |
| 040 | __ | |aCLCT_700073|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aBhattacharjee, Swagata|eResearcher |
| 110 | __ | |aDepartment of Radio Physics & Electronics|bUniversity of Calcutta|dKolkata |
| 245 | __ | |aStudies of device parameters of nanoscale double gate Si and Ge MOSFETs |
| 260 | __ | |aKolkata|bUniversity of Calcutta|c2012 |
| 502 | __ | |bPhD |
| 653 | __ | |aElectronics engineering |
| 653 | __ | |aCommunication engineering |
| 653 | __ | |aRadio physics |
| 653 | __ | |aElectronics |
| 700 | __ | |aBiswas, Abhijit|eGuide |
| 700 | __ | |aBasu, P K|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/162903|yShodhganga |
| 905 | __ | |anotification |
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