Title : Studies on the degradation of tin oxide-silicon interfaces

Type of Material: Thesis
Title: Studies on the degradation of tin oxide-silicon interfaces
Researcher: Raychaudhuri, Uma
Guide: Satyam, M
Department: Department of Electrical Communication Engineering
Publisher: Indian Institute of Science
Place: Bangalore
Year: 1989
Language: English
Subject: Engineering
Electronics Engineering
Computer
Dissertation/Thesis Note: PhD

00000000ntm a2200000ua 4500
00181808
003IN-AhILN
0052011-01-13 00:00:00
008__891231t1989||||ii#||||g|m||||||||||eng||
035__|a(IN-AhILN)th_81808
040__|aIISC_560012|dIN-AhILN
041__|aeng
100__|aRaychaudhuri, Uma|eResearcher
110__|aDepartment of Electrical Communication Engineering|bIndian Institute of Science|dBangalore|eIn
245__|aStudies on the degradation of tin oxide-silicon interfaces
260__|aBangalore|bIndian Institute of Science|c1989
502__|bPhD
653__|aEngineering
653__|aElectronics Engineering
653__|aComputer
700__|aSatyam, M|eGuide
905__|anotification

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