Type of Material: | Thesis |
Title: | MBE growth of Pbl-x Snx Te film, its bank model by IR absorption study and its applications to IR technology |
Researcher: | Srinivasan, T |
Guide: | Sobhanadri, J |
Department: | Department of Physics |
Publisher: | Indian Institute of Technology-Madras |
Place: | Chennai |
Year: | 1989 |
Language: | English |
Subject: | Physics | States of Matter | Solid State | Physics |
Dissertation/Thesis Note: | PhD |
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100 | __ | |aSrinivasan, T|eResearcher |
110 | __ | |aDepartment of Physics|bIndian Institute of Technology-Madras|dChennai|eIn |
245 | __ | |aMBE growth of Pbl-x Snx Te film, its bank model by IR absorption study and its applications to IR technology |
260 | __ | |aChennai|bIndian Institute of Technology-Madras|c1989 |
502 | __ | |bPhD |
650 | __ | |aPhysics|2UGC |
653 | __ | |aPhysics |
653 | __ | |aStates of Matter |
653 | __ | |aSolid State |
700 | __ | |aSobhanadri, J|eGuide |
905 | __ | |anotification |
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