| Type of Material: | Thesis |
| Title: | Transient capactiance studies of some deep levels in silicon. |
| Researcher: | Indusekhar, H |
| Guide: | Vikram Kumar |
| Department: | Department of Physics |
| Publisher: | Indian Institute of Science |
| Place: | Bangalore |
| Year: | 1986 |
| Language: | English |
| Subject: | Physics | Electricity | Dielectrics | Physics |
| Dissertation/Thesis Note: | PhD |
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| 001 | 81213 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
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| 100 | __ | |aIndusekhar, H|eResearcher |
| 110 | __ | |aDepartment of Physics|bIndian Institute of Science|dBangalore|eIn |
| 245 | __ | |aTransient capactiance studies of some deep levels in silicon. |
| 260 | __ | |aBangalore|bIndian Institute of Science|c1986 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysics |
| 653 | __ | |aElectricity |
| 653 | __ | |aDielectrics |
| 700 | __ | |aVikram Kumar|eGuide |
| 905 | __ | |anotification |
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