| Type of Material: | Thesis |
| Title: | Transient capactiance studies of some deep levels in silicon. |
| Researcher: | Indusekhar, H |
| Guide: | Vikram Kumar |
| Department: | Department of Physics |
| Publisher: | Indian Institute of Science |
| Place: | Bangalore |
| Year: | 1986 |
| Language: | English |
| Subject: | Physics | Electricity | Dielectrics | Physics |
| Dissertation/Thesis Note: | PhD |
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