Title : Charge trapping in SiO2 and Si-SiO2 interface state generation due to avalanche carrier injection in MoS devices

Type of Material: Thesis
Title: Charge trapping in SiO2 and Si-SiO2 interface state generation due to avalanche carrier injection in MoS devices
Researcher: Vishnubhala, Lashmanna
Guide: Vijayaraghavan, R
Department: Department of Physics
Publisher: Tata Institute of Fundamental Research
Place: Mumbai
Year: 1988
Language: English
Subject: Physics
Electronics
Electrodynamics
Conduction and Resistance
Semi Conductor
Physics
Dissertation/Thesis Note: PhD

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