| Type of Material: | Thesis |
| Title: | Charge trapping in SiO2 and Si-SiO2 interface state generation due to avalanche carrier injection in MoS devices |
| Researcher: | Vishnubhala, Lashmanna |
| Guide: | Vijayaraghavan, R |
| Department: | Department of Physics |
| Publisher: | Tata Institute of Fundamental Research |
| Place: | Mumbai |
| Year: | 1988 |
| Language: | English |
| Subject: | Physics | Electronics | Electrodynamics | Conduction and Resistance | Semi Conductor | Physics |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 76362 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 881231t1988||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_76362 |
| 040 | __ | |aTIFR_400005|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aVishnubhala, Lashmanna|eResearcher |
| 110 | __ | |aDepartment of Physics|bTata Institute of Fundamental Research|dMumbai|eIn |
| 245 | __ | |aCharge trapping in SiO2 and Si-SiO2 interface state generation due to avalanche carrier injection in MoS devices |
| 260 | __ | |aMumbai|bTata Institute of Fundamental Research|c1988 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysics |
| 653 | __ | |aElectronics |
| 653 | __ | |aElectrodynamics |
| 653 | __ | |aConduction and Resistance |
| 653 | __ | |aSemi Conductor |
| 700 | __ | |aVijayaraghavan, R|eGuide |
| 905 | __ | |anotification |
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