| Type of Material: | Thesis |
| Title: | Mass and charge transport in polycrystalline silicon |
| Researcher: | Ramana Murty, Malladi |
| Guide: | Reddy, K V |
| Department: | Department of Physics |
| Publisher: | Indian Institute of Technology-Madras |
| Place: | Chennai |
| Year: | 1991 |
| Language: | English |
| Subject: | Physics | Solid State | Charge Transport | Mass Transport | Polycrystalline Silicon | Physics |
| Dissertation/Thesis Note: | PhD |
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| 001 | 5189 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
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| 100 | __ | |aRamana Murty, Malladi|eResearcher |
| 110 | __ | |aDepartment of Physics|bIndian Institute of Technology-Madras|dChennai|eIn |
| 245 | __ | |aMass and charge transport in polycrystalline silicon |
| 260 | __ | |aChennai|bIndian Institute of Technology-Madras|c1991 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysics |
| 653 | __ | |aSolid State |
| 653 | __ | |aCharge Transport |
| 653 | __ | |aMass Transport |
| 653 | __ | |aPolycrystalline Silicon |
| 700 | __ | |aReddy, K V|eGuide |
| 905 | __ | |anotification |
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