| Type of Material: | Thesis |
| Title: | Composition structural and electrical characterization of titanium and vanadium silicide layers fabricated by high dose ion implantation on silicon crystals |
| Researcher: | Salvi, V P |
| Guide: | Rangwala, A A |
| Department: | Department of Physics |
| Publisher: | University of Mumbai |
| Place: | Mumbai |
| Year: | 1991 |
| Language: | English |
| Subject: | Physics | Crystallography | Vanadium Silicide Layers | Ion Implantation | Silicon Crystals | Physics |
| Dissertation/Thesis Note: | PhD |
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| 001 | 4954 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 911231t1991||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_4954 |
| 040 | __ | |aBOMB_400032|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aSalvi, V P|eResearcher |
| 110 | __ | |aDepartment of Physics|bUniversity of Mumbai|dMumbai|eIn |
| 245 | __ | |aComposition structural and electrical characterization of titanium and vanadium silicide layers fabricated by high dose ion implantation on silicon crystals |
| 260 | __ | |aMumbai|bUniversity of Mumbai|c1991 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysics |
| 653 | __ | |aCrystallography |
| 653 | __ | |aVanadium Silicide Layers |
| 653 | __ | |aIon Implantation |
| 653 | __ | |aSilicon Crystals |
| 700 | __ | |aRangwala, A A|eGuide |
| 905 | __ | |anotification |
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