| Type of Material: | Thesis |
| Title: | Study of group 1B impurities in silicon and gallium arsenide and photoquenching effect of EL2 defect in gallium arsenide |
| Researcher: | Pandian, V |
| Department: | Department of Physics |
| Publisher: | Indian Institute of Science |
| Place: | Bangalore |
| Year: | 1991 |
| Language: | English |
| Subject: | Physics | Crystallography | Silicon | Gallium Arsenide | Photoquenching | Physics |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 4951 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 911231t1991||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_4951 |
| 040 | __ | |aIISC_560012|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aPandian, V|eResearcher |
| 110 | __ | |aDepartment of Physics|bIndian Institute of Science|dBangalore|eIn |
| 245 | __ | |aStudy of group 1B impurities in silicon and gallium arsenide and photoquenching effect of EL2 defect in gallium arsenide |
| 260 | __ | |aBangalore|bIndian Institute of Science|c1991 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysics |
| 653 | __ | |aCrystallography |
| 653 | __ | |aSilicon |
| 653 | __ | |aGallium Arsenide |
| 653 | __ | |aPhotoquenching |
| 905 | __ | |anotification |
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