Title : Design and fabrication of optoelectronic devices based on III Nitride semiconductors

Type of Material: Thesis
Title: Design and fabrication of optoelectronic devices based on III Nitride semiconductors
Researcher: TC, Shibin Krishnan
Guide: Govind
Department: Physical Sciences (CSIR-NPL)
Year: 2019
Language: English
Subject: Physical Sciences
Physics
Physical and Basic Sciences
Dissertation/Thesis Note: PhD; 2019
Fulltext: Shodhganga

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035__|a(IN-AhILN)th_459928
040__|dIN-AhILN|aAcSIR)
041__|aeng
100__|eResearcher|aTC, Shibin Krishnan
110__|aPhysical Sciences (CSIR-NPL)|ein|b
245__|aDesign and fabrication of optoelectronic devices based on III Nitride semiconductors
260__|c2019|b
502__|bPhD|d2019
518__|d2019|oDate of Award
518__|oDate of Registration|d2013
518__|oDate of Completion|d2019
520__|aThe ability to detect radiation over a broad spectral range in ultrafast detection time is vital to numerous technological applications such as imaging, sensing and communication. Over the past two decades, tremendous progress has been made in Nitride-based optoelectronic devices, including light-emitting diodes (LEDs), lasers operating in the blue and nearultraviolet (UV) spectral range and broadband photodetectors (PDs). However, the use of III-nitrides to realize high efficiency photosensing devices operating in the deep UV, deep visible, and near IR spectral range is very limited. The underlying causes include the presence of large densities of defects and dislocations, due to the lack of suitable latticematched substrates, and large polarization fields and the resulting quantum-confined Stark effect. The advances in the growth technologies have significantly improved the crystal quality of epitaxial layers, however large difference in the lattic
650__|aPhysics|2UGC
650__|aPhysical and Basic Sciences|2AIU
653__|aPhysical Sciences
700__|aGovind|eGuide
856__|uhttp://shodhganga.inflibnet.ac.in/handle/10603/372818|yShodhganga
905__|afromsg

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