| Type of Material: | Thesis |
| Title: | Investigation of electrical properties of ZrO2 and HfO2 high- dielectric thin films in MOS capacitors |
| Researcher: | Udaya Bhanu, J |
| Guide: | Thangadurai, P |
| Department: | Centre for Nano Sciences and Technology |
| Publisher: | Pondicherry University, Puducherry |
| Place: | Kalapet |
| Year: | 2019 |
| Language: | English |
| Subject: | Physical Sciences | Multidisciplinary | Nanoscience and Nanotechnology | complementary metal oxide semiconductor | microelectronic memory | MOS capacitors | Physics | Physical and Basic Sciences |
| Dissertation/Thesis Note: | PhD; Centre for Nano Sciences and Technology, Pondicherry University, Puducherry, Kalapet; 2019; 1200160004 |
| Fulltext: | Shodhganga |
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| 040 | __ | |dIN-AhILN|aPNDI_605104 |
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| 100 | __ | |eResearcher|aUdaya Bhanu, J |
| 110 | __ | |aCentre for Nano Sciences and Technology|0U-0369|dKalapet|bPondicherry University, Puducherry|ein |
| 245 | __ | |aInvestigation of electrical properties of ZrO2 and HfO2 high- dielectric thin films in MOS capacitors |
| 260 | __ | |aKalapet|c2019|bPondicherry University, Puducherry |
| 300 | __ | |a159p.|dDVD |
| 502 | __ | |cCentre for Nano Sciences and Technology, Pondicherry University, Puducherry, Kalapet|o1200160004|d2019|bPhD |
| 518 | __ | |oDate of Award|d2020 |
| 650 | __ | |aPhysics|2UGC |
| 650 | __ | |aPhysical and Basic Sciences|2AIU |
| 653 | __ | |aPhysical Sciences |
| 653 | __ | |aMultidisciplinary |
| 653 | __ | |aNanoscience and Nanotechnology |
| 653 | __ | |acomplementary metal oxide semiconductor |
| 653 | __ | |amicroelectronic memory |
| 653 | __ | |aMOS capacitors |
| 700 | __ | |aThangadurai, P|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/436710|yShodhganga |
| 905 | __ | |afromsg |
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