| Type of Material: | Thesis |
| Title: | Vtmos-a new logic family for low power digital circuits |
| Researcher: | Ragini, Kanchinireddy |
| Guide: | Satyam, M. | Jinaga, B. C. |
| Department: | Department of Electronics and Communication Engineering |
| Publisher: | Jawaharlal Nehru Technological University, Hyderabad |
| Place: | Hyderabad |
| Year: | 2012 |
| Language: | English |
| Subject: | Circuits | Digital | Dynamic | Threshold | Vtmos | Electronics and Communication Engineering | Engineering and Technology |
| Dissertation/Thesis Note: | PhD; Department of Electronics and Communication Engineering, Jawaharlal Nehru Technological University, Hyderabad, Hyderabad; 2012 |
| Fulltext: | Shodhganga |
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| 001 | 454026 | |
| 003 | IN-AhILN | |
| 005 | 2024-07-15 17:27:55 | |
| 008 | __ | 240715t2012||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_454026 |
| 040 | __ | |aJNTU_500028|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aRagini, Kanchinireddy|eResearcher |
| 110 | __ | |aDepartment of Electronics and Communication Engineering|bJawaharlal Nehru Technological University, Hyderabad|dHyderabad|ein|0U-0017 |
| 245 | __ | |aVtmos-a new logic family for low power digital circuits |
| 260 | __ | |aHyderabad|bJawaharlal Nehru Technological University, Hyderabad|c2012 |
| 300 | __ | |a226 p. , i-a|c-|dNone |
| 500 | __ | |aN.d. |
| 502 | __ | |cDepartment of Electronics and Communication Engineering, Jawaharlal Nehru Technological University, Hyderabad, Hyderabad|d2012|bPhD |
| 520 | __ | |aThe need for extending low power circuits increased with the advent of use of large number of portable devices like cell phones, calculators , miniature computers etc. In all these devices one of the burning problems is increasing the life of battery .This can be achieved by reducing the power consumption of the individual circuits .One of the methods of reducing the power consumption is by operating the devices at low currents and low voltages. It is known that MOS devices and circuits, especially CMOS circuits newlineconsume relatively low power .But there seems to be a need to reduce this power further to prolong the life of the battery. MOSFET devices are generally operated above threshold voltages. But the devices can also newlineexhibit control characteristics, even below the threshold voltages .This region of operation of these devices may be called as sub threshold operation. Basically, the principle of sub threshold logic is, operating MOSFET in sub threshold region and using the leakage current |
| 650 | __ | |aElectronics and Communication Engineering|2UGC |
| 650 | __ | |aEngineering and Technology|2AIU |
| 653 | __ | |aCircuits |
| 653 | __ | |aDigital |
| 653 | __ | |aDynamic |
| 653 | __ | |aThreshold |
| 653 | __ | |aVtmos |
| 700 | __ | |aSatyam, M.|eGuide |
| 700 | __ | |eCo-Guide|aJinaga, B. C. |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/19778|yShodhganga |
| 905 | __ | |afromsg |
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