| Type of Material: | Thesis |
| Title: | Resistive ferroelectric switching studies in batio3 thin films for memory applications |
| Researcher: | Razi, Muhammed P. |
| Guide: | Babu, Ramesh G. |
| Department: | Department of Physics |
| Publisher: | Pondicherry University, Puducherry |
| Place: | Pondicherry |
| Year: | 2019 |
| Language: | English |
| Subject: | Physical Sciences | Resistive switching | Ferroelectric | Thin films | Ferroelectric thin films | Physics | Physical and Basic Sciences |
| Dissertation/Thesis Note: | PhD; Department of Physics, Pondicherry University, Puducherry, Pondicherry; 2019 |
| Fulltext: | Shodhganga |
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| 035 | __ | |a(IN-AhILN)th_451254 |
| 040 | __ | |dIN-AhILN|aPNDI_605104 |
| 041 | __ | |aeng |
| 100 | __ | |eResearcher|aRazi, Muhammed P. |
| 110 | __ | |aDepartment of Physics|ein|dPondicherry|bPondicherry University, Puducherry |
| 245 | __ | |aResistive ferroelectric switching studies in batio3 thin films for memory applications |
| 260 | __ | |c2019|aPondicherry|bPondicherry University, Puducherry |
| 300 | __ | |dDVD|av,88p. |
| 502 | __ | |cDepartment of Physics, Pondicherry University, Puducherry, Pondicherry|d2019|bPhD |
| 518 | __ | |oDate of Award|d2020 |
| 650 | __ | |aPhysics|2UGC |
| 650 | __ | |aPhysical and Basic Sciences|2AIU |
| 653 | __ | |aPhysical Sciences |
| 653 | __ | |aResistive switching |
| 653 | __ | |aFerroelectric |
| 653 | __ | |aThin films |
| 653 | __ | |aFerroelectric thin films |
| 700 | __ | |aBabu, Ramesh G.|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/431878|yShodhganga |
| 905 | __ | |afromsg |
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