| Type of Material: | Thesis |
| Title: | Investigations on Cu2ZnSnSe4 and Ag2ZnSnSe4 thin films and numerical simulation of their heterojunction |
| Researcher: | Patil, Rhishikesh M |
| Guide: | Chandra, Hema G |
| Department: | Physics |
| Publisher: | Visvesvaraya National Institute of Technology, Nagpur (Deemed University) |
| Place: | Nagpur |
| Year: | 2021 |
| Language: | English |
| Subject: | Engineering | Engineering and Technology | Engineering Chemical | Physics | Physical and Basic Sciences |
| Dissertation/Thesis Note: | PhD; Physics, Visvesvaraya National Institute of Technology, Nagpur (Deemed University), Nagpur |
| Fulltext: | Shodhganga |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 449081 | |
| 003 | IN-AhILN | |
| 005 | 2023-07-28 17:00:21 | |
| 008 | __ | 230728t2021||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_449081 |
| 040 | __ | |aNITN_440011|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aPatil, Rhishikesh M|eResearcher |
| 110 | __ | |aPhysics|bVisvesvaraya National Institute of Technology, Nagpur (Deemed University)|dNagpur|ein |
| 245 | __ | |aInvestigations on Cu2ZnSnSe4 and Ag2ZnSnSe4 thin films and numerical simulation of their heterojunction |
| 260 | __ | |aNagpur|bVisvesvaraya National Institute of Technology, Nagpur (Deemed University)|c2021 |
| 300 | __ | |a185|dCD |
| 502 | __ | |bPhD|cPhysics, Visvesvaraya National Institute of Technology, Nagpur (Deemed University), Nagpur |
| 518 | __ | |oDate of Award|d2021 |
| 520 | __ | |anewlineinewlineAbstractnewlineThe rising energy prices, limitations in energy supply and growing concerns about newlineclimate changes had enabled to switch towards solar energy. Due to its high abundance and newlinesustainability, solar photovoltaic s has emerged as a wide area of research. Today, most newlinepromising absorber for thin film solar cell is Cu(In,Ga)Se2 (CIGS) with conversion efficiency newline22.6 %. However the problems associated with CIGS such as the limited supply of In and Ga, newlinehence scarcity and increased cost of photovoltaic device are crucial. In order to compensate newlinefor such limitations, it is essential to replace the trending CIGS with an absorber layer newlinecomposed of earth-abundant elements with promising properties for photovoltaic newlineapplications, which has led the researcher towards I2-II-IV-VI4 [I: Cu, Ag, II: Zn, Hg, Cd, newlineIV: Sn, Ge, Si, IV: S, Se] grouped quaternary/pentanary chalcogenide compounds. Among newlinethis group of materials, the quatern |
| 650 | __ | |aPhysics|2UGC |
| 650 | __ | |aPhysical and Basic Sciences|2AIU |
| 653 | __ | |aEngineering |
| 653 | __ | |aEngineering and Technology |
| 653 | __ | |aEngineering Chemical |
| 700 | __ | |aChandra, Hema G|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/442305|yShodhganga |
| 905 | __ | |afromsg |
User Feedback Comes Under This section.