Type of Material: | Thesis |
Title: | Study of Dielectric and Ferroelectric Properties of Bismuth Titanale System |
Researcher: | bagde, Shraddha |
Guide: | Deshpande. A.V |
Department: | Physics |
Publisher: | Visvesvaraya National Institute of Technology, Nagpur (Deemed University) |
Place: | Nagpur |
Year: | 2019 |
Language: | English |
Subject: | Physical Sciences | Physics | Physics Applied | Physics | Physical and Basic Sciences |
Dissertation/Thesis Note: | PhD; Physics, Visvesvaraya National Institute of Technology, Nagpur (Deemed University), Nagpur |
Fulltext: | Shodhganga |
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040 | __ | |aNITN_440011|dIN-AhILN |
041 | __ | |aeng |
100 | __ | |abagde, Shraddha|eResearcher |
110 | __ | |aPhysics|bVisvesvaraya National Institute of Technology, Nagpur (Deemed University)|dNagpur|ein |
245 | __ | |aStudy of Dielectric and Ferroelectric Properties of Bismuth Titanale System |
260 | __ | |aNagpur|bVisvesvaraya National Institute of Technology, Nagpur (Deemed University)|c2019 |
300 | __ | |a162|dDVD |
502 | __ | |bPhD|cPhysics, Visvesvaraya National Institute of Technology, Nagpur (Deemed University), Nagpur |
518 | __ | |oDate of Award|d2023 |
520 | __ | |anewlineABSTRACTnewlineLead based ceramics like lead titanate, lead zirconate titanate, lead magnesium newlineniobate, are widely used as ferroelectric materials in capacitors, sensors, transducers newlineand actuator applications. Lead zirconate titanate (PZT) is one of the promising newlinematerials for use in non-volatile random access memories owing to its ferroelectricnewlineproperties. However, the PZT material is not environmentally friendly, thus more newlineattention in recent years is towards lead-free ferroelectric materials. Aurivillus-type newlinebismuth-layered-structure ferroelectrics (BLSF) have been studied for memory newlineapplications. The general formula of BLSFs is (Bi2O2)newline2+(Amand#8722;1BmO3m+1)newline2and#8722;, where m=3 newlineand A is mono, di or trivalent cation and B is tri, tetra or pentavalent cation. newlineBismuth titanate Bi4Ti3O12 (BTO) has high Curie temperature (6750C), high newlinedielectric constant and low dielectric loss. It shows spontaneous polarization value |
650 | __ | |aPhysics|2UGC |
650 | __ | |aPhysical and Basic Sciences|2AIU |
653 | __ | |aPhysical Sciences |
653 | __ | |aPhysics |
653 | __ | |aPhysics Applied |
700 | __ | |aDeshpande. A.V|eGuide |
856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/441985|yShodhganga |
905 | __ | |afromsg |
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