| Type of Material: | Thesis |
| Title: | Electronic excitation induced effects on the structural and electrical properties of HfO2 thin films |
| Researcher: | Vinod Kumar, Karra. |
| Guide: | Nageswara Rao, S.V.S. |
| Department: | School of Physics |
| Publisher: | University of Hyderabad, Hyderabad |
| Place: | Hyderabad |
| Year: | 2022 |
| Language: | English |
| Subject: | Physical Sciences | Physics | Physics Applied | Physics | Physical and Basic Sciences |
| Dissertation/Thesis Note: | PhD; School of Physics, University of Hyderabad, Hyderabad, Hyderabad |
| Fulltext: | Shodhganga |
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| 001 | 448667 | |
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| 005 | 2023-07-25 15:06:53 | |
| 008 | __ | 230725t2022||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_448667 |
| 040 | __ | |aHYDR_500046|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aVinod Kumar, Karra.|eResearcher |
| 110 | __ | |aSchool of Physics|bUniversity of Hyderabad, Hyderabad|dHyderabad|ein |
| 245 | __ | |aElectronic excitation induced effects on the structural and electrical properties of HfO2 thin films |
| 260 | __ | |aHyderabad|bUniversity of Hyderabad, Hyderabad|c2022 |
| 300 | __ | |a181p|dNone |
| 502 | __ | |cSchool of Physics, University of Hyderabad, Hyderabad, Hyderabad|bPhD |
| 518 | __ | |oDate of Award|d2022 |
| 518 | __ | |oDate of Registration|d2015 |
| 520 | __ | |anewlineIn this thesis, the effects of electronic excitation induced by Gamma irradiation, Swift Heavy Ionnewline(SHI) irradiation and Laser annealing on the structural and electrical properties of HfO2 thin filmsnewlinehave been studied. Further, an array of high density gold nanoparticles have been produced on thenewlinesurface of HfO2 thin films, without modifying the phase of HfO2 using a non-thermal lasernewlineannealing technique. HfO2 thin films used in this study were deposited on high mobility and/ornewlinewide bandgap semiconductor substrates by using Radio Frequency (RF) magnetron sputtering andnewlinee-beam evaporation techniques.newlineAs expected, thermal annealing has introduced monoclinic phase in otherwise amorphous HfO2newlinethin films which resulted in an increase in the leakage current density of the HfO2 based MetalnewlineOxide Semiconductor (MOS) structures. A systematic increase in leakage current density indicatesnewlinethe production of defects in HfO2 thin films with increasing gam |
| 650 | __ | |aPhysics|2UGC |
| 650 | __ | |aPhysical and Basic Sciences|2AIU |
| 653 | __ | |aPhysical Sciences |
| 653 | __ | |aPhysics |
| 653 | __ | |aPhysics Applied |
| 700 | __ | |aNageswara Rao, S.V.S.|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/419841|yShodhganga |
| 905 | __ | |afromsg |
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