| Type of Material: | Thesis |
| Title: | Next generation nanoscale double gate TFET with improved ambipolar and switching current performance |
| Researcher: | Sahoo, Sasmita |
| Guide: | Mishra, Guru Prasad Subhash Chandra | Dash, Sidhartha |
| Department: | Faculty of Electronics and Communication Engineering |
| Publisher: | Siksha O Anusandhan University |
| Place: | Bhubaneswar |
| Year: | 2022 |
| Language: | Arabic |
| Subject: | Next generation | Nanoscale double gate TFET | Ambipolar and switching current performance |
| Dissertation/Thesis Note: | PhD |
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| 100 | __ | |aSahoo, Sasmita|eResearcher |
| 110 | __ | |aFaculty of Electronics and Communication Engineering|bSiksha O Anusandhan University|dBhubaneswar |
| 245 | __ | |aNext generation nanoscale double gate TFET with improved ambipolar and switching current performance |
| 260 | __ | |aBhubaneswar|bSiksha O Anusandhan University|c2022 |
| 502 | __ | |bPhD |
| 653 | __ | |aNext generation |
| 653 | __ | |aNanoscale double gate TFET |
| 653 | __ | |aAmbipolar and switching current performance |
| 700 | __ | |aMishra, Guru Prasad Subhash Chandra|eGuide |
| 700 | __ | |aDash, Sidhartha|eGuide |
| 905 | __ | |anotification |
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