Type of Material: | Thesis |
Title: | Modeling and analysis of Gaussian channel junction less FinFET for SRAM application |
Researcher: | Shalu |
Guide: | Rana, Ashwani Kumar |
Department: | Department of Electronics and Communication Engineering |
Publisher: | National Institute of Technology, Hamirpur |
Place: | Hamirpur |
Year: | 2019 |
Language: | English |
Subject: | Gaussian channel | FinFET | SRAM application | Electronics and Communication Engineering |
Dissertation/Thesis Note: | PhD |
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001 | 443012 | |
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005 | 2021-05-24 04:46:36 | |
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035 | __ | |a(IN-AhILN)th_443012 |
040 | __ | |aNITH_177005|dIN-AhILN |
041 | __ | |aeng |
100 | __ | |aShalu|eResearcher |
110 | __ | |aDepartment of Electronics and Communication Engineering|bNational Institute of Technology, Hamirpur|dHamirpur |
245 | __ | |aModeling and analysis of Gaussian channel junction less FinFET for SRAM application |
260 | __ | |aHamirpur|bNational Institute of Technology, Hamirpur|c2019 |
502 | __ | |bPhD |
650 | __ | |aElectronics and Communication Engineering|2UGC |
653 | __ | |aGaussian channel |
653 | __ | |aFinFET |
653 | __ | |aSRAM application |
700 | __ | |aRana, Ashwani Kumar|eGuide |
905 | __ | |anotification |
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