| Type of Material: | Thesis |
| Title: | Design and simulation of Bandgap-Engineered MOSFETs |
| Researcher: | Das, Sanghamitra |
| Guide: | Maity, Prof. Chinmay Kumar |
| Department: | Electronics and communication engineering |
| Publisher: | Siksha O Anusandhan University |
| Place: | Bhubaneswar |
| Year: | 2020 |
| Language: | English |
| Subject: | Design and simulation | Bandgap-Engineered MOSFETs | Electronics and Communication Engineering |
| Dissertation/Thesis Note: | PhD |
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| 100 | __ | |aDas, Sanghamitra|eResearcher |
| 110 | __ | |aElectronics and communication engineering|bSiksha O Anusandhan University|dBhubaneswar |
| 245 | __ | |aDesign and simulation of Bandgap-Engineered MOSFETs |
| 260 | __ | |aBhubaneswar|bSiksha O Anusandhan University|c2020 |
| 502 | __ | |bPhD |
| 650 | __ | |aElectronics and Communication Engineering|2UGC |
| 653 | __ | |aDesign and simulation |
| 653 | __ | |aBandgap-Engineered MOSFETs |
| 700 | __ | |aMaity, Prof. Chinmay Kumar|eGuide |
| 905 | __ | |anotification |
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