| Type of Material: | Thesis |
| Title: | Fabrication and analysis of P-Channel Sno and N-Channel Zno thin films field-effect transistors |
| Researcher: | Gowd, Akkili Viswanath |
| Guide: | Thangavel, R. |
| Department: | Physics |
| Publisher: | Indian School of Mines, Dhanbad |
| Place: | Dhanbad |
| Year: | 2020 |
| Language: | English |
| Subject: | P-Channel Sno | N-Channel Zno | Field-effect transistors | Physics |
| Dissertation/Thesis Note: | PhD |
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| 001 | 440962 | |
| 003 | IN-AhILN | |
| 005 | 2020-10-28 05:01:48 | |
| 008 | __ | 201028t2020||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_440962 |
| 040 | __ | |aISMD_826004|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aGowd, Akkili Viswanath|eResearcher |
| 110 | __ | |aPhysics|bIndian School of Mines, Dhanbad|dDhanbad |
| 245 | __ | |aFabrication and analysis of P-Channel Sno and N-Channel Zno thin films field-effect transistors |
| 260 | __ | |aDhanbad|bIndian School of Mines, Dhanbad|c2020 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aP-Channel Sno |
| 653 | __ | |aN-Channel Zno |
| 653 | __ | |aField-effect transistors |
| 700 | __ | |aThangavel, R.|eGuide |
| 905 | __ | |anotification |
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