| Type of Material: | Thesis |
| Title: | Electrical breakdown in bipolar transistors |
| Researcher: | Ramkumar, K |
| Guide: | Satyam, M | Subrahmanyam, S V |
| Department: | Department of Electrical Communication Engineering |
| Publisher: | Indian Institute of Science |
| Place: | Bangalore |
| Year: | 1980 |
| Language: | English |
| Subject: | Engineering | Electronics Engineering | Short and Long wave Electronics | Semi Conductor Devices |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 43890 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 801231t1980||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_43890 |
| 040 | __ | |aIISC_560012|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aRamkumar, K|eResearcher |
| 110 | __ | |aDepartment of Electrical Communication Engineering|bIndian Institute of Science|dBangalore|eIn |
| 245 | __ | |aElectrical breakdown in bipolar transistors |
| 260 | __ | |aBangalore|bIndian Institute of Science|c1980 |
| 502 | __ | |bPhD |
| 653 | __ | |aEngineering |
| 653 | __ | |aElectronics Engineering |
| 653 | __ | |aShort and Long wave Electronics |
| 653 | __ | |aSemi Conductor Devices |
| 700 | __ | |aSatyam, M|eGuide |
| 700 | __ | |aSubrahmanyam, S V|eGuide |
| 905 | __ | |anotification |
User Feedback Comes Under This section.