| Type of Material: | Thesis |
| Title: | Current gain variability and physical modelling of normal and I2 L bipolar transistors |
| Researcher: | Jindal, Subodh |
| Guide: | Bhattacharya, A B |
| Department: | Centre for Applied Research in Electronics |
| Publisher: | Indian Institute of Technology-Delhi |
| Place: | New Delhi |
| Year: | 1980 |
| Language: | English |
| Subject: | Engineering | Electronics Engineering | Short and Long wave Electronics | Semi Conductor Devices |
| Dissertation/Thesis Note: | PhD |
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| 100 | __ | |aJindal, Subodh|eResearcher |
| 110 | __ | |aCentre for Applied Research in Electronics|bIndian Institute of Technology-Delhi|dNew Delhi|eIn |
| 245 | __ | |aCurrent gain variability and physical modelling of normal and I2 L bipolar transistors |
| 260 | __ | |aNew Delhi|bIndian Institute of Technology-Delhi|c1980 |
| 502 | __ | |bPhD |
| 653 | __ | |aEngineering |
| 653 | __ | |aElectronics Engineering |
| 653 | __ | |aShort and Long wave Electronics |
| 653 | __ | |aSemi Conductor Devices |
| 700 | __ | |aBhattacharya, A B|eGuide |
| 905 | __ | |anotification |
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