| Type of Material: | Thesis |
| Title: | An investigation of high dose proton electron and different high energy ion irradiation effects on the electrical characteristics of silicon NPN transistors |
| Researcher: | Bharathi, M. N. |
| Guide: | Gnana Prakash, A. P. |
| Publisher: | University of Mysore |
| Place: | Mysore |
| Language: | English |
| Dissertation/Thesis Note: | PhD |
| Fulltext: | Shodhganga |
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| 001 | 432716 | |
| 003 | IN-AhILN | |
| 005 | 2018-08-15 01:23:15 | |
| 008 | __ | 180815t####||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_432716 |
| 040 | __ | |aMYSR_570005|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aBharathi, M. N.|eResearcher |
| 245 | __ | |aAn investigation of high dose proton electron and different high energy ion irradiation effects on the electrical characteristics of silicon NPN transistors |
| 260 | __ | |aMysore|bUniversity of Mysore |
| 502 | __ | |bPhD |
| 700 | __ | |aGnana Prakash, A. P.|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/204348|yShodhganga |
| 905 | __ | |anotification |
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