| Type of Material: | Thesis |
| Title: | Growth and electrical properties of Cds-SiO2-Si structures |
| Researcher: | Nahar, R K |
| Guide: | Bhattacharya, A B | Nagchoudhary, D |
| Department: | Centre for Applied Research in Electronics |
| Publisher: | Indian Institute of Technology-Delhi |
| Place: | New Delhi |
| Year: | 1979 |
| Language: | English |
| Subject: | Chemistry | Crystallography | Crystallization |
| Dissertation/Thesis Note: | PhD |
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| 001 | 43000 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 791231t1979||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_43000 |
| 040 | __ | |aIITD_110016|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aNahar, R K|eResearcher |
| 110 | __ | |aCentre for Applied Research in Electronics|bIndian Institute of Technology-Delhi|dNew Delhi|eIn |
| 245 | __ | |aGrowth and electrical properties of Cds-SiO2-Si structures |
| 260 | __ | |aNew Delhi|bIndian Institute of Technology-Delhi|c1979 |
| 502 | __ | |bPhD |
| 653 | __ | |aChemistry |
| 653 | __ | |aCrystallography |
| 653 | __ | |aCrystallization |
| 700 | __ | |aBhattacharya, A B|eGuide |
| 700 | __ | |aNagchoudhary, D|eGuide |
| 905 | __ | |anotification |
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