| Type of Material: | Thesis |
| Title: | Electrical transport properties of pure and doped p-type InSb and n-type PbTe semiconductor films |
| Researcher: | Venkata Krishna, Komanduri |
| Guide: | Mathur, P C |
| Department: | Department of Physics |
| Publisher: | University Of Delhi |
| Place: | New Delhi |
| Year: | 1980 |
| Language: | English |
| Subject: | Physics | Solid State Physics | Physics |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 42316 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 801231t1980||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_42316 |
| 040 | __ | |aDELI_110007|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aVenkata Krishna, Komanduri|eResearcher |
| 110 | __ | |aDepartment of Physics|bUniversity Of Delhi|dNew Delhi|eIn |
| 245 | __ | |aElectrical transport properties of pure and doped p-type InSb and n-type PbTe semiconductor films |
| 260 | __ | |aNew Delhi|bUniversity Of Delhi|c1980 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysics |
| 653 | __ | |aSolid State Physics |
| 700 | __ | |aMathur, P C|eGuide |
| 905 | __ | |anotification |
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