| Type of Material: | Thesis |
| Title: | On some studies of the physics of electronic devices based on group IV SiGe and SiGeC alloys |
| Researcher: | Biswas, Abhijit |
| Guide: | Basu, P K |
| Publisher: | University of Calcutta |
| Place: | Kolkata |
| Language: | English |
| Dissertation/Thesis Note: | PhD |
| Fulltext: | Shodhganga |
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| 001 | 407312 | |
| 003 | IN-AhILN | |
| 005 | 2018-08-14 11:18:08 | |
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| 035 | __ | |a(IN-AhILN)th_407312 |
| 040 | __ | |aCLCT_700073|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aBiswas, Abhijit|eResearcher |
| 245 | __ | |aOn some studies of the physics of electronic devices based on group IV SiGe and SiGeC alloys |
| 260 | __ | |aKolkata|bUniversity of Calcutta |
| 502 | __ | |bPhD |
| 700 | __ | |aBasu, P K|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/174309|yShodhganga |
| 905 | __ | |anotification |
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