| Type of Material: | Thesis |
| Title: | Modeling and Simulation of InP GaAs based High Electron Mobility Transistors for High Frequency Appliations |
| Researcher: | Ajayan. J |
| Guide: | Nirmal. D |
| Publisher: | Karunya University |
| Place: | Coimbatore |
| Language: | English |
| Dissertation/Thesis Note: | PhD |
| Fulltext: | Shodhganga |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 400539 | |
| 003 | IN-AhILN | |
| 005 | 2018-08-14 10:42:19 | |
| 008 | __ | 180814t####||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_400539 |
| 040 | __ | |aKAUN_641114|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aAjayan. J|eResearcher |
| 245 | __ | |aModeling and Simulation of InP GaAs based High Electron Mobility Transistors for High Frequency Appliations |
| 260 | __ | |aCoimbatore|bKarunya University |
| 502 | __ | |bPhD |
| 700 | __ | |aNirmal. D|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/166234|yShodhganga |
| 905 | __ | |anotification |
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