| Type of Material: | Thesis |
| Title: | Studies on the _i_ depth distribution of the carrier lifetime in crystalline silicon and _ii_ damage induced in MOS structure by MeV energy electrons and swift heavy ions |
| Researcher: | Shinde, Ninad Shankar |
| Guide: | Dhole, S D |
| Publisher: | Savitribai Phule Pune University |
| Place: | Pune |
| Language: | English |
| Dissertation/Thesis Note: | PhD |
| Fulltext: | Shodhganga |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 373602 | |
| 003 | IN-AhILN | |
| 005 | 2018-08-14 08:16:01 | |
| 008 | __ | 180814t####||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_373602 |
| 040 | __ | |aPUNE_411007|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aShinde, Ninad Shankar|eResearcher |
| 245 | __ | |aStudies on the _i_ depth distribution of the carrier lifetime in crystalline silicon and _ii_ damage induced in MOS structure by MeV energy electrons and swift heavy ions |
| 260 | __ | |aPune|bSavitribai Phule Pune University |
| 502 | __ | |bPhD |
| 700 | __ | |aDhole, S D|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/133569|yShodhganga |
| 905 | __ | |anotification |
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