| Type of Material: | Thesis |
| Title: | Modeling of quantum mechanical effects in nanometer scale MOSFETs |
| Researcher: | Chaudhry, Amit |
| Guide: | Roy, J N |
| Publisher: | Panjab University |
| Place: | Chandigarh |
| Language: | English |
| Dissertation/Thesis Note: | PhD |
| Fulltext: | Shodhganga |
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| 100 | __ | |aChaudhry, Amit|eResearcher |
| 245 | __ | |aModeling of quantum mechanical effects in nanometer scale MOSFETs |
| 260 | __ | |aChandigarh|bPanjab University |
| 502 | __ | |bPhD |
| 700 | __ | |aRoy, J N|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/92398|yShodhganga |
| 905 | __ | |anotification |
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