Title : A study of oxidation mechanism in 4H_SiC for schottky diode fabrication

Type of Material: Thesis
Title: A study of oxidation mechanism in 4H_SiC for schottky diode fabrication
Researcher: Gupta, Sanjeev Kumar
Guide: Azam, Ameer and Akhtar
Publisher: Aligarh Muslim University
Place: Aligarh
Language: English
Dissertation/Thesis Note: PhD
Fulltext: Shodhganga

00000000ntm a2200000ua 4500
001312653
003IN-AhILN
0052018-08-14 03:39:27
008__180814t####||||ii#||||g|m||||||||||eng||
035__|a(IN-AhILN)th_312653
040__|aAMUL_202002|dIN-AhILN
041__|aeng
100__|aGupta, Sanjeev Kumar|eResearcher
245__|aA study of oxidation mechanism in 4H_SiC for schottky diode fabrication
260__|aAligarh|bAligarh Muslim University
502__|bPhD
700__|aAzam, Ameer and Akhtar|eGuide
856__|uhttp://shodhganga.inflibnet.ac.in/handle/10603/59404|yShodhganga
905__|anotification

User Feedback Comes Under This section.