| Type of Material: | Thesis |
| Title: | X-ray diffraction study of polytypism in silicon carbide in relation to crystal growth |
| Researcher: | Krishna Padmanabhan |
| Department: | Department of Electronics Engineering |
| Publisher: | Banaras Hindu University |
| Place: | Varanasi |
| Year: | 1962 |
| Language: | English |
| Subject: | Electricity | Electronics | X and Gamma Rays |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 30381 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 621231t1962||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_30381 |
| 040 | __ | |aBHUL_221005|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aKrishna Padmanabhan|eResearcher |
| 110 | __ | |aDepartment of Electronics Engineering|bBanaras Hindu University|dVaranasi|eIn |
| 245 | __ | |aX-ray diffraction study of polytypism in silicon carbide in relation to crystal growth |
| 260 | __ | |aVaranasi|bBanaras Hindu University|c1962 |
| 502 | __ | |bPhD |
| 653 | __ | |aElectricity |
| 653 | __ | |aElectronics |
| 653 | __ | |aX and Gamma Rays |
| 905 | __ | |anotification |
User Feedback Comes Under This section.