| Type of Material: | Thesis |
| Title: | An investigation of high dose gamma and ion irradiation effects on the electrical characteristics of silicon germanium heterojunction bipolar transistors |
| Researcher: | Praveen, K. C. |
| Guide: | Gnana Prakash, A. P. |
| Publisher: | University of Mysore |
| Place: | Mysore |
| Year: | 2015-07-15 |
| Language: | English |
| Dissertation/Thesis Note: | PhD |
| Fulltext: | Shodhganga |
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| 001 | 301673 | |
| 003 | IN-AhILN | |
| 005 | 2018-08-14 02:43:17 | |
| 008 | __ | 180814t2015||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_301673 |
| 040 | __ | |aMYSR_570005|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aPraveen, K. C.|eResearcher |
| 245 | __ | |aAn investigation of high dose gamma and ion irradiation effects on the electrical characteristics of silicon germanium heterojunction bipolar transistors |
| 260 | __ | |aMysore|bUniversity of Mysore|c2015-07-15 |
| 502 | __ | |bPhD |
| 700 | __ | |aGnana Prakash, A. P.|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/45139|yShodhganga |
| 905 | __ | |anotification |
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