| Type of Material: | Thesis |
| Title: | Study on the electron irradiated ferroelectric zno li thin films |
| Researcher: | Biradar, Balaji |
| Guide: | Jali, V M |
| Publisher: | Gulbarga University |
| Place: | Gulbarga |
| Year: | 2015-03-12 |
| Language: | English |
| Dissertation/Thesis Note: | PhD |
| Fulltext: | Shodhganga |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 295446 | |
| 003 | IN-AhILN | |
| 005 | 2018-08-14 02:20:52 | |
| 008 | __ | 180814t2015||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_295446 |
| 040 | __ | |aGULB_585106|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aBiradar, Balaji|eResearcher |
| 245 | __ | |aStudy on the electron irradiated ferroelectric zno li thin films |
| 246 | __ | |aElectron irradiated ferroelectric zno li thin films |
| 260 | __ | |aGulbarga|bGulbarga University|c2015-03-12 |
| 502 | __ | |bPhD |
| 520 | __ | |aZinc Oxide a one and four semiconductor has a wide band gap and large exciton binding energy because of which it has been used in optoelectronic devices |
| 700 | __ | |aJali, V M|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/37018|yShodhganga |
| 905 | __ | |anotification |
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