| Type of Material: | Thesis |
| Title: | Modeling simulation and characterization of noise in inalas ingaas tied geometry double gate high electron mobility transistor for millimeter wave applications |
| Researcher: | Bhattacharya, Monika |
| Guide: | Gupta, Mridula |
| Publisher: | University of Delhi |
| Place: | New Delhi |
| Year: | 2015-02-24 |
| Language: | English |
| Dissertation/Thesis Note: | PhD |
| Fulltext: | Shodhganga |
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| 001 | 294702 | |
| 003 | IN-AhILN | |
| 005 | 2018-08-14 02:18:40 | |
| 008 | __ | 180814t2015||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_294702 |
| 040 | __ | |aDELI_110007|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aBhattacharya, Monika|eResearcher |
| 245 | __ | |aModeling simulation and characterization of noise in inalas ingaas tied geometry double gate high electron mobility transistor for millimeter wave applications |
| 260 | __ | |aNew Delhi|bUniversity of Delhi|c2015-02-24 |
| 502 | __ | |bPhD |
| 700 | __ | |aGupta, Mridula|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/36153|yShodhganga |
| 905 | __ | |anotification |
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