| Type of Material: | Thesis |
| Title: | Breakdown and capacitance properties of some two terminal silicon epitaxial device structures |
| Researcher: | Rajendra Kumar |
| Guide: | Bhattacharya, A B |
| Department: | Department of Physics |
| Publisher: | Indian Institute of Technology-Delhi |
| Place: | New Delhi |
| Year: | 1976 |
| Language: | English |
| Subject: | Engineering | Electronics Engineering | Short and Long Wave Electronics | Semi Conductor Devices | Physics |
| Dissertation/Thesis Note: | PhD |
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| 001 | 28011 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 761231t1976||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_28011 |
| 040 | __ | |aIITD_110016|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aRajendra Kumar|eResearcher |
| 110 | __ | |aDepartment of Physics|bIndian Institute of Technology-Delhi|dNew Delhi|eIn |
| 245 | __ | |aBreakdown and capacitance properties of some two terminal silicon epitaxial device structures |
| 260 | __ | |aNew Delhi|bIndian Institute of Technology-Delhi|c1976 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aEngineering |
| 653 | __ | |aElectronics Engineering |
| 653 | __ | |aShort and Long Wave Electronics |
| 653 | __ | |aSemi Conductor Devices |
| 700 | __ | |aBhattacharya, A B|eGuide |
| 905 | __ | |anotification |
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