| Type of Material: | Thesis |
| Title: | Study of GaN based schottky barrier diodes and the effect of swift heavy ion irradiation on their electrical properties |
| Researcher: | Kumar, Ashish |
| Guide: | Singh, Rajendra |
| Department: | Department of Physics |
| Publisher: | Indian Institute of Technology, Delhi |
| Place: | New Delhi |
| Year: | 2013 |
| Language: | English |
| Subject: | Physics | Physical Science | GaN Based Schottky Barrier Diodes | Swift Heavy Ion Irradiation | Electrical Properties | Physics |
| Dissertation/Thesis Note: | PhD |
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