| Type of Material: | Thesis |
| Title: | Study of GaN based schottky barrier diodes and the effect of swift heavy ion irradiation on their electrical properties |
| Researcher: | Kumar, Ashish |
| Guide: | Singh, Rajendra |
| Department: | Department of Physics |
| Publisher: | Indian Institute of Technology, Delhi |
| Place: | New Delhi |
| Year: | 2013 |
| Language: | English |
| Subject: | Physics | Physical Science | GaN Based Schottky Barrier Diodes | Swift Heavy Ion Irradiation | Electrical Properties | Physics |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 264259 | |
| 003 | IN-AhILN | |
| 005 | 2014-02-07 10:46:06 | |
| 008 | __ | 140207t2013||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_264259 |
| 040 | __ | |aIITD_110016|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aKumar, Ashish|eResearcher |
| 110 | __ | |aDepartment of Physics|bIndian Institute of Technology, Delhi|dNew Delhi |
| 245 | __ | |aStudy of GaN based schottky barrier diodes and the effect of swift heavy ion irradiation on their electrical properties |
| 260 | __ | |aNew Delhi|bIndian Institute of Technology, Delhi|c2013 |
| 502 | __ | |bPhD |
| 518 | __ | |oDate of Notification|d2013-10 |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysics |
| 653 | __ | |aPhysical Science |
| 653 | __ | |aGaN Based Schottky Barrier Diodes |
| 653 | __ | |aSwift Heavy Ion Irradiation |
| 653 | __ | |aElectrical Properties |
| 700 | __ | |aSingh, Rajendra|eGuide |
| 905 | __ | |anotification |
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