| Type of Material: | Thesis |
| Title: | Preparation and characterization of High k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric applications |
| Researcher: | Philip, Anu |
| Guide: | Rajeev Kumar K |
| Department: | Department of Instrumentation |
| Publisher: | Cochin University of Science and Technology |
| Place: | Cochin |
| Year: | December, 2011 |
| Language: | English |
| Subject: | Instrumentation | High-k aluminum oxide | Atomic layer | Gate dielectric applications |
| Dissertation/Thesis Note: | PhD |
| Fulltext: | Shodhganga |
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| 001 | 258957 | |
| 003 | IN-AhILN | |
| 005 | 2013-12-04 12:42:59 | |
| 008 | __ | 121224t2023||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_258957 |
| 040 | __ | |aCUST_682022|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aPhilip, Anu|eResearcher |
| 110 | __ | |aDepartment of Instrumentation|bCochin University of Science and Technology|dCochin |
| 245 | __ | |aPreparation and characterization of High k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric applications |
| 260 | __ | |aCochin|bCochin University of Science and Technology|cDecember, 2011 |
| 502 | __ | |bPhD |
| 518 | __ | |oDate of Notification|d2011-12 |
| 653 | __ | |aInstrumentation |
| 653 | __ | |aHigh-k aluminum oxide |
| 653 | __ | |aAtomic layer |
| 653 | __ | |aGate dielectric applications |
| 700 | __ | |aRajeev Kumar K|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/5860|yShodhganga |
| 905 | __ | |anotification |
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