Type of Material: | Thesis |
Title: | Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals |
Researcher: | Ganesh V |
Guide: | Baskar K |
Department: | Faculty of Science and Humanities |
Publisher: | Anna University |
Place: | Chennai |
Year: | 01/10/2010 |
Language: | English |
Subject: | Light emitting diodes | Laser diodes | Metal-organic chemical vapor deposition | Semiconductor | Physics |
Dissertation/Thesis Note: | PhD |
Fulltext: | Shodhganga |
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035 | __ | |a(IN-AhILN)th_257231 |
040 | __ | |aANNA_600025|dIN-AhILN |
041 | __ | |aeng |
100 | __ | |aGanesh V|eResearcher |
110 | __ | |aFaculty of Science and Humanities|bAnna University|dChennai |
245 | __ | |aSynthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals |
260 | __ | |aChennai|bAnna University|c01/10/2010 |
502 | __ | |bPhD |
518 | __ | |oDate of Notification|d2010-10-01 |
520 | __ | |aSemiconductors such as group III-nitrides are playing important role in optoelectronic devices especially blue-green light emitting diodes (LED s), short wavelength laser diodes (LD s) and UV detectors for hightemperature and high power microelectronic |
653 | __ | |aLight emitting diodes |
653 | __ | |aLaser diodes |
653 | __ | |aMetal-organic chemical vapor deposition |
653 | __ | |aSemiconductor |
653 | __ | |aPhysics |
700 | __ | |aBaskar K|eGuide |
856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/9921|yShodhganga |
905 | __ | |anotification |
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