Title : Design and simulation of nanoscale tunneling field effect transistors for cmos application

Type of Material: Thesis
Title: Design and simulation of nanoscale tunneling field effect transistors for cmos application
Researcher: Sneh, Saurabh
Guide: Kumar, Jagadesh
Department: Department of Electical Engineering
Publisher: Indian Institute of Technology Delhi
Place: Delhi
Year: 2009
Language: English
Subject: Electrical engineering
Cmos application
Nanoscale tunneling
Dissertation/Thesis Note: PhD

00000000ntm a2200000ua 4500
001246748
003IN-AhILN
0052012-06-26 03:54:12
008__120626t2009||||ii#||||g|m||||||||||eng||
035__|a(IN-AhILN)th_246748
040__|aIITD_110016|dIN-AhILN
041__|aeng
100__|aSneh, Saurabh|eResearcher
110__|aDepartment of Electical Engineering|bIndian Institute of Technology Delhi|dDelhi
245__|aDesign and simulation of nanoscale tunneling field effect transistors for cmos application
260__|aDelhi|bIndian Institute of Technology Delhi|c2009
502__|bPhD
653__|aElectrical engineering
653__|aCmos application
653__|aNanoscale tunneling
700__|aKumar, Jagadesh|eGuide
905__|anotification

User Feedback Comes Under This section.