| Type of Material: | Thesis |
| Title: | Design and simulation of trench gate power mosfets for switching and RF applications |
| Researcher: | Saxena, Raghvendra Sahai |
| Guide: | Jigneshkumar, M |
| Department: | Department of Electrical Engineering |
| Publisher: | Indian Institute of Technology Delhi |
| Place: | New Delhi |
| Year: | 2012 |
| Language: | English |
| Subject: | Electrical engineering | Power mosfets | Electrical Engineering |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 246017 | |
| 003 | IN-AhILN | |
| 005 | 2012-05-30 03:01:13 | |
| 008 | __ | 120530t2012||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_246017 |
| 040 | __ | |aIITD_110016|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aSaxena, Raghvendra Sahai|eResearcher |
| 110 | __ | |aDepartment of Electrical Engineering|bIndian Institute of Technology,Delhi|dNew Delhi |
| 245 | __ | |aDesign and simulation of trench gate power mosfets for switching and RF applications |
| 260 | __ | |aNew Delhi|bIndian Institute of Technology Delhi|c2012 |
| 502 | __ | |bPhD |
| 650 | __ | |aElectrical Engineering|2UGC |
| 653 | __ | |aElectrical engineering |
| 653 | __ | |aPower mosfets |
| 700 | __ | |aJigneshkumar, M|eGuide |
| 905 | __ | |anotification |
User Feedback Comes Under This section.