| Type of Material: | Thesis |
| Title: | An analytical study of high power schottky barrier diode on 4th silicon carbide (SiC) wafers |
| Researcher: | Talwar, Rajneesh |
| Department: | Department of Electronics and Communication Engineering |
| Publisher: | Thapar University |
| Place: | Patiala |
| Year: | 2010 |
| Language: | English |
| Subject: | Electronics and Communication Engineering | Electronics and Communication Engineering |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 241555 | |
| 003 | IN-AhILN | |
| 005 | 2012-01-05 10:47:17 | |
| 008 | __ | 120105t2010||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_241555 |
| 040 | __ | |aTIET_147001|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aTalwar, Rajneesh|eResearcher |
| 110 | __ | |aDepartment of Electronics and Communication Engineering|bThapar University|dPatiala |
| 245 | __ | |aAn analytical study of high power schottky barrier diode on 4th silicon carbide (SiC) wafers |
| 260 | __ | |aPatiala|bThapar University|c2010 |
| 502 | __ | |bPhD |
| 650 | __ | |aElectronics and Communication Engineering|2UGC |
| 653 | __ | |aElectronics and Communication Engineering |
| 905 | __ | |anotification |
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