| Type of Material: | Thesis |
| Title: | Analytical modeling and simulation of a fully depleted dual material surrounding GATE MOSFETs considering short channel effects |
| Researcher: | Balamurugan, N B |
| Guide: | Sankarnarayan, K |
| Department: | Department of Information Communication Technology |
| Publisher: | Anna University |
| Place: | Chennai |
| Year: | 2009 |
| Language: | English |
| Subject: | Information & Communication Technology |
| Dissertation/Thesis Note: | PhD |
| Fulltext: | Shodhganga |
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| 005 | 2011-05-13 12:29:21 | |
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| 100 | __ | |aBalamurugan, N B|eResearcher |
| 110 | __ | |aDepartment of Information Communication Technology|bAnna University|dChennai |
| 245 | __ | |aAnalytical modeling and simulation of a fully depleted dual material surrounding GATE MOSFETs considering short channel effects |
| 260 | __ | |aChennai|bAnna University|c2009 |
| 502 | __ | |bPhD |
| 653 | __ | |aInformation & Communication Technology |
| 700 | __ | |aSankarnarayan, K|eGuide |
| 856 | __ | |uhttp://shodhganga.inflibnet.ac.in/handle/10603/27996|yShodhganga |
| 905 | __ | |anotification |
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