Title : Studies on capacitance conductance and interface properties of silicon and silicon carbide MOS structures

Type of Material: Thesis
Title: Studies on capacitance conductance and interface properties of silicon and silicon carbide MOS structures
Researcher: Nagaraj, Brinda
Guide: Suryanarayanan, G
Department: Department of Physics
Publisher: Bangalore University
Place: Bangalore
Year: 1976
Language: English
Subject: Physics
Electricity
Electrodynamics
Conductivity
Physics
Dissertation/Thesis Note: PhD

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035__|a(IN-AhILN)th_23068
040__|aBNGL_560056|dIN-AhILN
041__|aeng
100__|aNagaraj, Brinda|eResearcher
110__|aDepartment of Physics|bBangalore University|dBangalore|eIn
245__|aStudies on capacitance conductance and interface properties of silicon and silicon carbide MOS structures
260__|aBangalore|bBangalore University|c1976
502__|bPhD
650__|aPhysics|2UGC
653__|aPhysics
653__|aElectricity
653__|aElectrodynamics
653__|aConductivity
700__|aSuryanarayanan, G|eGuide
905__|anotification

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