| Type of Material: | Thesis |
| Title: | Properties of RF plasma grown Al2O3 and AIN insulators on silicon and effect of plasma annealing on thermally grown SiO2 films |
| Researcher: | Sudhir Chandra |
| Guide: | Bhattacharya, A B |
| Department: | Department of Mechanical Engineering |
| Publisher: | University Of Delhi |
| Place: | New Delhi |
| Year: | 1980 |
| Language: | English |
| Subject: | Technology | Chemical Technology | Applied Physical Chemistry | Colloid Chemistry | Surface Phenomena | Mechanical engineering |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 22670 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 801231t1980||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_22670 |
| 040 | __ | |aDELI_110007|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aSudhir Chandra|eResearcher |
| 110 | __ | |aDepartment of Mechanical Engineering|bUniversity Of Delhi|dNew Delhi|eIn |
| 245 | __ | |aProperties of RF plasma grown Al2O3 and AIN insulators on silicon and effect of plasma annealing on thermally grown SiO2 films |
| 260 | __ | |aNew Delhi|bUniversity Of Delhi|c1980 |
| 502 | __ | |bPhD |
| 650 | __ | |aMechanical engineering|2UGC |
| 653 | __ | |aTechnology |
| 653 | __ | |aChemical Technology |
| 653 | __ | |aApplied Physical Chemistry |
| 653 | __ | |aColloid Chemistry |
| 653 | __ | |aSurface Phenomena |
| 700 | __ | |aBhattacharya, A B|eGuide |
| 905 | __ | |anotification |
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