| Type of Material: | Thesis |
| Title: | Fabrication and electrical characterization of A1GaN/GaN metal-insulator semiconductor high-electron-mobility-transistors with different gate insulators |
| Researcher: | Balchandra, K |
| Guide: | Baskar, L |
| Department: | Department of Physics |
| Publisher: | Anna University |
| Place: | Chennai |
| Year: | 2006 |
| Language: | English |
| Subject: | Physical Sciences | Physics | Physics |
| Accession No: | 44(21) |
| Dissertation/Thesis Note: | PhD |
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| 001 | 188199 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
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| 035 | __ | |a(IN-AhILN)th_188199 |
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| 100 | __ | |aBalchandra, K|eResearcher |
| 110 | __ | |aDepartment of Physics|bAnna University|dChennai |
| 245 | __ | |aFabrication and electrical characterization of A1GaN/GaN metal-insulator semiconductor high-electron-mobility-transistors with different gate insulators |
| 260 | __ | |aChennai|bAnna University|c2006 |
| 502 | __ | |bPhD |
| 650 | __ | |aPhysics|2UGC |
| 653 | __ | |aPhysical Sciences |
| 653 | __ | |aPhysics |
| 700 | __ | |aBaskar, L|eGuide |
| 852 | __ | |p44(21) |
| 905 | __ | |anotification |
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