| Type of Material: | Thesis |
| Title: | Study of gate leakage current in sub 100 nm mosfet with highK gate dielectric stack |
| Researcher: | Tyagi, Hitender Kumar |
| Department: | Department of Electronics Engineering |
| Publisher: | Kurukshetra University |
| Place: | Kurukshetra |
| Year: | 2007 |
| Language: | English |
| Subject: | Science and Technology | Engineering Sciences | Electronics and Communication Engineering |
| Accession No: | 45(52) |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 187102 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 071231t2007||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_187102 |
| 040 | __ | |aKRKT_132119|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aTyagi, Hitender Kumar|eResearcher |
| 110 | __ | |aDepartment of Electronics Engineering|bKurukshetra University|dKurukshetra |
| 245 | __ | |aStudy of gate leakage current in sub 100 nm mosfet with highK gate dielectric stack |
| 260 | __ | |aKurukshetra|bKurukshetra University|c2007 |
| 502 | __ | |bPhD |
| 653 | __ | |aScience and Technology |
| 653 | __ | |aEngineering Sciences |
| 653 | __ | |aElectronics and Communication Engineering |
| 852 | __ | |p45(52) |
| 905 | __ | |anotification |
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