| Type of Material: | Thesis |
| Title: | Modeling and simulation of 6H-SiC MOSFETs for high power and high temperature applications |
| Researcher: | Kaushik, Navneet |
| Guide: | Gupta, R S |
| Department: | Department of Electronic Science |
| Publisher: | University of Delhi |
| Place: | Delhi |
| Year: | 2005 |
| Language: | English |
| Subject: | Electronic Science | Electronic Science |
| Accession No: | TH 0014713%39121 |
| Dissertation/Thesis Note: | PhD |
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| 001 | 184538 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
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| 100 | __ | |aKaushik, Navneet|eResearcher |
| 110 | __ | |aDepartment of Electronic Science|bUniversity of Delhi|dDelhi |
| 245 | __ | |aModeling and simulation of 6H-SiC MOSFETs for high power and high temperature applications |
| 260 | __ | |aDelhi|bUniversity of Delhi|c2005 |
| 502 | __ | |bPhD |
| 650 | __ | |aElectronic Science|2UGC |
| 653 | __ | |aElectronic Science |
| 700 | __ | |aGupta, R S|eGuide |
| 852 | __ | |pTH 0014713%39121 |
| 905 | __ | |anotification |
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