| Type of Material: | Thesis |
| Title: | Two dimensional modeling and characterization of short channel vertical cylindrical/surrounding gate SOI MOSFETs (CGT/SGT) for ULSI circuit applicat |
| Researcher: | Abhinav Kranti |
| Guide: | Kranti, Abhinav |
| Department: | Department of Electronic Science |
| Publisher: | University of Delhi |
| Place: | Delhi |
| Year: | 2001 |
| Language: | English |
| Subject: | Electronic Science | Electronic Science |
| Accession No: | Th 0011724%37307 |
| Dissertation/Thesis Note: | PhD |
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| 001 | 181797 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
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| 035 | __ | |a(IN-AhILN)th_181797 |
| 040 | __ | |aDELI_110007|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aAbhinav Kranti|eResearcher |
| 110 | __ | |aDepartment of Electronic Science|bUniversity of Delhi|dDelhi |
| 245 | __ | |aTwo dimensional modeling and characterization of short channel vertical cylindrical/surrounding gate SOI MOSFETs (CGT/SGT) for ULSI circuit applicat |
| 260 | __ | |aDelhi|bUniversity of Delhi|c2001 |
| 502 | __ | |bPhD |
| 650 | __ | |aElectronic Science|2UGC |
| 653 | __ | |aElectronic Science |
| 700 | __ | |aKranti, Abhinav|eGuide |
| 852 | __ | |pTh 0011724%37307 |
| 905 | __ | |anotification |
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