| Type of Material: | Thesis |
| Title: | Laser damage studies in Si, GaAs, Ge and InSb with a normal laser pulse of 106 um wavelength |
| Researcher: | Vohra Kuanr, Alka |
| Guide: | Vohra Kuanr, Alka |
| Department: | Department of Electronic Science |
| Publisher: | University of Delhi |
| Place: | Delhi |
| Year: | 1993 |
| Language: | English |
| Subject: | Electronic Science | Electronic Science |
| Accession No: | Th 0009117%36074 |
| Dissertation/Thesis Note: | PhD |
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| 001 | 179409 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
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| 110 | __ | |aDepartment of Electronic Science|bUniversity of Delhi|dDelhi |
| 245 | __ | |aLaser damage studies in Si, GaAs, Ge and InSb with a normal laser pulse of 106 um wavelength |
| 260 | __ | |aDelhi|bUniversity of Delhi|c1993 |
| 502 | __ | |bPhD |
| 650 | __ | |aElectronic Science|2UGC |
| 653 | __ | |aElectronic Science |
| 700 | __ | |aVohra Kuanr, Alka|eGuide |
| 852 | __ | |pTh 0009117%36074 |
| 905 | __ | |anotification |
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