| Type of Material: | Thesis |
| Title: | Electrical properties of tin doped indium oxide-silicon structure |
| Researcher: | Biswas nee Arora, Swati |
| Guide: | Abhai, ManSingh |
| Department: | Department of Physics and Astrophysics |
| Publisher: | University of Delhi |
| Place: | Delhi |
| Year: | 1990 |
| Language: | English |
| Subject: | Physics and Astrophysics |
| Accession No: | Th 0008177%36074 |
| Dissertation/Thesis Note: | PhD |
| 000 | 00000ntm a2200000ua 4500 | |
| 001 | 178685 | |
| 003 | IN-AhILN | |
| 005 | 2011-01-13 00:00:00 | |
| 008 | __ | 071130t1990||||ii#||||g|m||||||||||eng|| |
| 035 | __ | |a(IN-AhILN)th_178685 |
| 040 | __ | |aDELI_110007|dIN-AhILN |
| 041 | __ | |aeng |
| 100 | __ | |aBiswas nee Arora, Swati|eResearcher |
| 110 | __ | |aDepartment of Physics and Astrophysics|bUniversity of Delhi|dDelhi |
| 245 | __ | |aElectrical properties of tin doped indium oxide-silicon structure |
| 260 | __ | |aDelhi|bUniversity of Delhi|c1990 |
| 502 | __ | |bPhD |
| 653 | __ | |aPhysics and Astrophysics |
| 700 | __ | |aAbhai, ManSingh|eGuide |
| 852 | __ | |pTh 0008177%36074 |
| 905 | __ | |anotification |
User Feedback Comes Under This section.